Reference Only

XP3C017AYT

MOSFETs N+P MOS 30V 9.3/-7.5A 17.8/30mOhms.

Manufacturer:

Mfr Part:
XP3C017AYT

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePMPAK-6
Transistor PolarityN-Channel, P-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage30 V, 30 V
Id - Continuous Drain Current7.5 A, 9.3 A
Rds On - Drain-Source Resistance17.8 mOhms, 30 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage2.5 V, 2.5 V
Qg - Gate Charge16 nC, 14.4 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2.5 W
Channel ModeEnhancement
PackagingReel
ConfigurationDual
Fall Time5 ns, 8 ns
Forward Transconductance - Min22 S, 12 S
Product TypeMOSFETs
Rise Time7 ns, 6 ns
SeriesXP
SubcategoryTransistors
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time21 ns, 30 ns
Typical Turn-On Delay Time9 ns, 11 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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