Reference Only

XP6B1K0EU6

MOSFETs P-MOS -60V -0.39A 1000mOhms.

Manufacturer:

Mfr Part:
XP6B1K0EU6

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Transistor PolarityP-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current390 mA
Rds On - Drain-Source Resistance1 Ohms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge4 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation277 mW
Channel ModeEnhancement
PackagingReel
ConfigurationDual
Fall Time8 ns
Forward Transconductance - Min800 mS
Product TypeMOSFETs
Rise Time4 ns
SeriesXP
SubcategoryTransistors
Transistor Type2 P-Channel
Typical Turn-Off Delay Time19 ns
Typical Turn-On Delay Time8 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

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Lead Time: 22 Weeks
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(Minimum: 3.000 / Multiples: 1)
Quantity Unit PriceExt. Price
0,109 €327,00 €
0,095 €570,00 €
0,082 €738,00 €
0,066 €1.584,00 €
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