Reference Only

XP6NA3R2MT

MOSFETs N-MOS 60V 30A 3.28mOhms.

Manufacturer:

Mfr Part:
XP6NA3R2MT

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePMPAK-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance3.28 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge99.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation5 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time63 ns
Forward Transconductance - Min60 S
Product TypeMOSFETs
Rise Time52 ns
SeriesXP
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time42 ns
Typical Turn-On Delay Time18 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 22 Weeks
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