The IX4351NE is designed specifically to drive SiC-MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn on and turn off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn off.
Littelfuse IX4351NE-9A low-side SiC-MOSFET and IGBT Driver
Features
- Negative gate drive pull-down for improved dV/dt immunity
- Eliminates the need for separate negative supply
- Quick turn-on and turn-off of power SiC-MOSFET and IGBT
- Separate 9A peak source and sink outputs
- -10V to +25 V operating voltage range
- Internal negative charge pump regulator for selectable negative gate drive bias
- TTL and CMOS compatible input
- Under Voltage lockout (UVLO)
- Thermal shutdown
- Open drain FAULT output
Applications
- Automotive: On board EV Charger & DC Charging Stations
- Light Industrial: Motors, Inverters or Rectifiers
- Data Center & Cloud: Power Supplies & UPS
- PFC, AC/DC & DC/DC Converters