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Vishay SiEH4800EW N-Channel MOSFET

Vishay SiEH4800EW N-Channel MOSFET is fully lead (Pb)-free and features wettable flanks that improve solderability. This MOSFET operates over a temperature range from -55°C to +175°C and a drain-source voltage of 80V. The MOSFET features a maximum drain-source voltage rating of 80V and a gate-source voltage of ±20V. The SiEH4800 MOSFET finds application in motor drive control and battery management.

Features

Enhanced solderability due to wettable flanks
Lead-free, halogen-free and RoHS-compliant
Low Drain-source resistance (RDS) x Total Gate Charge (Qg) Figure-of-Merit (FOM)
Smaller footprint
TrenchFET Gen IV power MOSFET
UIS tested and 100% effective total gate resistance (Rg)

Applications

Battery management
Motor drive control
Synchronous rectification

Technical Specifications

Parameters		Values
Drain-source voltage (Vds)		80V
Gate-source voltage (Vgs)		±20V
Maximum Rds(on)	Vgs= 7.5V	0.00135Ω
Maximum Rds(on)	Vgs= 10V	0.00115Ω
Typical Total gate charge (Qg)		140nC
Operating temperature range		-55°C to +175°C