Vishay SiR570DP N-Channel MOSFET
Vishay SiR570DP N-Channel MOSFET is a TrenchFET Gen V power MOSFET tuned for the lowest Rds x Qoss Figure-of-Merit (FOM). This MOSFET is RoHS-compliant and halogen-free. The SiR570DP MOSFET features a maximum drain-source voltage rating of 150V and a gate-source voltage of ±20V. This N-channel MOSFET operates over a temperature range of -55°C to +150°C and finds application in power supplies and DC/DC converters.
Features
- Halogen-free and RoHS-compliant
- Low Drain-source resistance (RDS) x Total Gate Charge (Qg) Figure-of-Merit (FOM)
- Lowest RDS x Qoss FOM
- Rg 100% and UIS tested
- TrenchFET Gen V power MOSFET
Applications
- DC/DC converters
- Motor drive control
- Power supplies
- Primary side switch
- Synchronous rectification
Technical Specifications
| Parameters | Values | |
|---|---|---|
| Drain-source voltage (Vds) | 150V | |
| Gate-source voltage (Vgs) | ±20V | |
| Maximum Rds (on) | Vgs = 7.5V | 0.0085Ω |
| Vgs = 10V | 0.0079Ω | |
| Typical Total gate charge (Qg) | 35.1nC | |
| Total train current | 77.4A | |
